ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect

Liu, Wenyan; Zhang, Yu; Ruan, Cheng; Wang, Dan; Zhang, Tieqiang; Feng, Yi; Gao, Wenzhu; Yin, Jingzhi; Wang, Yiding; Riley, Alexis P.; Hu, Michael Z.; Yu, William W.

doi:10.1155/2015/298614

ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect

Journal Article · Wed Dec 31 23:00:00 EST 2014 · Journal of Nanomaterials

DOI:https://doi.org/10.1155/2015/298614· OSTI ID:1225110

Liu, Wenyan ^[1]; Zhang, Yu ^[2]; Ruan, Cheng ^[1]; Wang, Dan ^[3]; Zhang, Tieqiang ^[3]; Feng, Yi ^[3]; Gao, Wenzhu ^[3]; Yin, Jingzhi ^[1]; Wang, Yiding ^[1]; Riley, Alexis P. ^[4]; Hu, Michael Z. ^[5]; Yu, William W. ^[6]

State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China, State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130012, China
State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130012, China
Department of Chemistry and Physics, Louisiana State University, Shreveport, LA 71115, USA
Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China, Department of Chemistry and Physics, Louisiana State University, Shreveport, LA 71115, USA

The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half maximum (FWHM), and power efficiency (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed little due to the low emission temperature coefficients of 0.022, 0.050, and 0.068 nm/°C for red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. These indicate that ZnCuInS/ZnSe/ZnS QDs are more suitable for downconversion LEDs compared to CdSe QDs.

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Sponsoring Organization:: USDOE

OSTI ID:: 1225110

Alternate ID(s):: OSTI ID: 1236586

Journal Information:: Journal of Nanomaterials, Journal Name: Journal of Nanomaterials Vol. 2015; ISSN 1687-4110

Publisher:: Hindawi Publishing CorporationCopyright Statement

Country of Publication:: Egypt

Language:: English

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