Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal
- Nanjing Univ., Nanjing (China); Brookhaven National Lab., Upton, NY (United States)
- Nagoya Univ., Nagoya (Japan); Japan Science and Technology Agency, Saitama (Japan); Tokyo Institute of Technology, Yokohama (Japan)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Tokyo Institute of Technology, Yokohama (Japan)
- Nanjing Univ., Nanjing (China)
In this study, we have investigated the interfacial structure of epitaxial (Ba,Sr)TiO3 films grown on (111)-oriented SrTiO3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a<110> comprised of a misfit dislocation along <112>, and threading dislocations along <110> or <100>. The misfit dislocation with Burgers vector of a <110> can dissociate into two ½ a <110> partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba0.7Sr0.3)TiO3 films.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC00112704
- OSTI ID:
- 1224766
- Report Number(s):
- BNL-108487-2015-JA; APPLAB; KC0403020
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 14; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Misfit strain relaxations of (101)-oriented ferroelectric PbTiO 3 /(La, Sr)(Al, Ta)O 3 thin film systems
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journal | December 2018 |
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