skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

Abstract

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions movedmore » toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.« less

Authors:
 [1];  [2];  [3];  [3];  [3];  [3];  [2];  [2];  [2];  [2]
  1. Alabama A&M Univ., Normal, AL (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Alabama A&M Univ., Normal, AL (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22); USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation
OSTI Identifier:
1224182
Alternate Identifier(s):
OSTI ID: 1246253
Report Number(s):
BNL-108270-2015-JA
Journal ID: ISSN 0168-9002; NN2001
Grant/Contract Number:  
SC00112704; 2012-DN-077-ARI065-03; NA-22; NRC-27-10-514
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Additional Journal Information:
Journal Volume: 784; Journal ID: ISSN 0168-9002
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CdZnTe and CdMnTe; Nuclear radiation detectors; Te inclusions; Thermal annealing in Cd vapor; Te diffusion and migration; Temperature gradient annealing

Citation Formats

Egarievwe, Stephen U., Yang, Ge, Egarievwe, Alexander, Okwechime, Ifechukwude O., Gray, Justin, Hales, Zaveon M., Hossain, Anwar, Camarda, Guiseppe S., Bolotnikov, Aleksey E., and James, Ralph B. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors. United States: N. p., 2015. Web. doi:10.1016/j.nima.2015.02.006.
Egarievwe, Stephen U., Yang, Ge, Egarievwe, Alexander, Okwechime, Ifechukwude O., Gray, Justin, Hales, Zaveon M., Hossain, Anwar, Camarda, Guiseppe S., Bolotnikov, Aleksey E., & James, Ralph B. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors. United States. https://doi.org/10.1016/j.nima.2015.02.006
Egarievwe, Stephen U., Yang, Ge, Egarievwe, Alexander, Okwechime, Ifechukwude O., Gray, Justin, Hales, Zaveon M., Hossain, Anwar, Camarda, Guiseppe S., Bolotnikov, Aleksey E., and James, Ralph B. 2015. "Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors". United States. https://doi.org/10.1016/j.nima.2015.02.006. https://www.osti.gov/servlets/purl/1224182.
@article{osti_1224182,
title = {Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors},
author = {Egarievwe, Stephen U. and Yang, Ge and Egarievwe, Alexander and Okwechime, Ifechukwude O. and Gray, Justin and Hales, Zaveon M. and Hossain, Anwar and Camarda, Guiseppe S. and Bolotnikov, Aleksey E. and James, Ralph B.},
abstractNote = {Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.},
doi = {10.1016/j.nima.2015.02.006},
url = {https://www.osti.gov/biblio/1224182}, journal = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},
issn = {0168-9002},
number = ,
volume = 784,
place = {United States},
year = {Wed Feb 11 00:00:00 EST 2015},
month = {Wed Feb 11 00:00:00 EST 2015}
}

Journal Article:

Citation Metrics:
Cited by: 16 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

High-Purity CdMnTe Radiation Detectors: A High-Resolution Spectroscopic Evaluation
journal, April 2013


Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects
journal, April 2010


Impurity gettering effect of Te inclusions in CdZnTe single crystals
journal, December 2008


Effects of Te Inclusions on the Performance of CdZnTe Radiation Detectors
journal, October 2008


Effect of Te precipitates on the performance of CdZnTe detectors
journal, April 2006


Post-growth Annealing of Cadmium Zinc Telluride Crystals for Room-Temperature Radiation Detectors
journal, March 2012


Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors
journal, September 2013


Elimination of Te Inclusions in ${\rm Cd}_{1-x}{\rm Zn}_{x}{\rm Te}$ Crystals by Short-term Thermal Annealing
journal, April 2012


Temperature-gradient annealing of CdZnTe under Te overpressure
journal, September 2012