Test of the Peierls-Nabarro model for dislocations in silicon
- Ottawa Carleton Institute of Physics, University of Ottawa Campus, Ottawa, Ontario, K1N 6N5 (Canada)
- Fairfax Materials Research Inc., 5613 Marble Arch Way, Alexandria, Virginia 22315-4011 (United States)
We show, using an atomistic model with a Stillinger-Weber potential (SWP), that in the absence of reconstruction, the basic assumption of the Peierls-Nabarro (PN) model that the dislocation core is spread within the glide plane is verified for silicon. The Peierls stress (PS) obtained from the two models are in quantitative agreement ({approx}0.3{mu}), when restoring forces obtained from first principles generalized stacking-fault energy surfaces are used in the PN model [B. Joos, Q. Ren, and M. S. Duesbery, Phys. Rev. B {bold 50}, 5890 (1994)]. The PS was found to be isotropic in the glide plane. Within the SWP model no evidence of dissociation in the shuffle dislocations is found but glide sets do separate into two partials.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- DOE Contract Number:
- AC03-76SF00098; AC05-84OR21400
- OSTI ID:
- 122330
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 52, Issue 18; Other Information: PBD: 1 Nov 1995
- Country of Publication:
- United States
- Language:
- English
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