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Title: Market-Driven EFG Modules Final Report: 14 December 1995--30 June 1999

Abstract

This report describes the progress made in the 3-year program at ASE Americas Inc. in the PVMaT 4A2 Initiative on the development of Edge-Defined Film-Fed Growth (EFG) silicon wafer technology. This program was performed over the period from December 14, 1995 to June 30, 1999. The work focused on advancing EFG manufacturing technology and lowering production costs in three areas: I. EFG Wafers--through better silicon feedstock utilization, improvements in growth, a wafer thickness reduction from 300 to 250 microns, and a higher bulk wafer electronic quality; additionally, new technology for laser cutting of wafers was demonstrated; II. Solar Cells--by an increase in solar cell efficiency, and implementation of a new glass etch process; III. Modules--by lamination cycle improvements, introduction of a new diode housing, and simplification of module construction.

Authors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
12177
Report Number(s):
NREL/SR-520-26833
TRN: US200312%%164
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Technical Report
Resource Relation:
Other Information: Supercedes report DE00012177; PBD: 13 Sep 1999; PBD: 13 Sep 1999
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CONSTRUCTION; EFFICIENCY; GLASS; IMPLEMENTATION; LASERS; MANUFACTURING; PRODUCTION; SILICON; SOLAR CELLS; THICKNESS; PVMAT; SILICON WAFER TECHNOLOGY; EDGE-DEFINED FILM-FED GROWTH (EFG); PHOTOVOLTAICS; EFG MANUFACTURING TECHNOLOGY; EFG WAFERS; MODULES; SOLAR CELL EFFICIENCY

Citation Formats

Kardauskas, M., and Kalejs, J. Market-Driven EFG Modules Final Report: 14 December 1995--30 June 1999. United States: N. p., 1999. Web. doi:10.2172/12177.
Kardauskas, M., & Kalejs, J. Market-Driven EFG Modules Final Report: 14 December 1995--30 June 1999. United States. doi:10.2172/12177.
Kardauskas, M., and Kalejs, J. Mon . "Market-Driven EFG Modules Final Report: 14 December 1995--30 June 1999". United States. doi:10.2172/12177. https://www.osti.gov/servlets/purl/12177.
@article{osti_12177,
title = {Market-Driven EFG Modules Final Report: 14 December 1995--30 June 1999},
author = {Kardauskas, M. and Kalejs, J.},
abstractNote = {This report describes the progress made in the 3-year program at ASE Americas Inc. in the PVMaT 4A2 Initiative on the development of Edge-Defined Film-Fed Growth (EFG) silicon wafer technology. This program was performed over the period from December 14, 1995 to June 30, 1999. The work focused on advancing EFG manufacturing technology and lowering production costs in three areas: I. EFG Wafers--through better silicon feedstock utilization, improvements in growth, a wafer thickness reduction from 300 to 250 microns, and a higher bulk wafer electronic quality; additionally, new technology for laser cutting of wafers was demonstrated; II. Solar Cells--by an increase in solar cell efficiency, and implementation of a new glass etch process; III. Modules--by lamination cycle improvements, introduction of a new diode housing, and simplification of module construction.},
doi = {10.2172/12177},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {9}
}

Technical Report:

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