Nanomechanical properties of platinum thin films synthesized by atomic layer deposition

Journal Article · Sun Mar 01 00:00:00 EST 2015 · Surface and Coatings Technology

DOI:https://doi.org/10.1016/j.surfcoat.2015.01.037· OSTI ID:1211616

Mamun, M.A.; Gu, D.; Baumgart, H.; Elmustafa, A.A.

The nanomechanical properties of Pt thin films grown on Si (100) using atomic layer deposition (ALD) were investigated using nanoindentation. Recently, atomic layer deposition (ALD) has successfully demonstrated the capability to deposit ultra-thin films of platinum (Pt). Using (methylcyclopentadienyl) trimethylplatinum (MeCpPtMe3) as chemical platinum precursor and oxygen (O2) as the oxidizing agent, the ALD synthesis of Pt can be achieved with high conformity and excellent film uniformity. The ALD process window for Pt films was experimentally established in the temperature range between 270 °C and 320 °C, where the sheet conductance was constant over that temperature range, indicating stable ALD Pt film growth rate. ALD growth of Pt films exhibits very poor nucleation and adhesion characteristics on bare Si surfaces when the native oxide was removed by 2% HF etch. Pt adhesion improves for thermally oxidized Si wafers and for Si wafers covered with native oxide. Three ALD Pt films deposited at 800, 900, and 1000 ALD deposition cycles were tested for the structural and mechanical properties. Additionally, the sample with 900 ALD deposition cycles was further annealed in forming gas (95% N2 and 5% H2) at 450 °C for 30 min in order to passivate dangling bonds in the grain boundaries of the polycrystalline Pt film. Cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscope (SEM) were employed to characterize the films' surface structure and morphology. Nanoindentation technique was used to evaluate the hardness and modulus of the ALD Pt films of various film thicknesses. The results indicate that the films depict comparable hardness and modulus results; however, the 800 and 1000 ALD deposition cycles films without forming gas annealing experienced significant amount of pileup, whereas the 900 ALD deposition cycles sample annealed in forming gas resulted in a smaller pileup.

• Research Organization: Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: AC05-06OR23177
• OSTI ID: 1211616
• Report Number(s): JLAB-ACC-15-1945; DOE/OR/23177-3469; PII: S0257897215000717
• Journal Information: Surface and Coatings Technology, Vol. 265, Issue C; ISSN 0257-8972
• Country of Publication: United States
• Language: English