Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics

Journal Article · Sun Apr 01 04:00:00 EDT 2012 · Current Opinion in Solid State and Materials Science

DOI:https://doi.org/10.1016/j.cossms.2011.11.002· OSTI ID:1211029

Li, XL

Metal assisted chemical etching (MacEtch) is a recently developed anisotropic wet etching method that is capable of producing high aspect ratio semiconductor nanostructures from patterned metal film. In this review article, we highlight the characteristics of MacEtch of silicon (Si) including controllability of the produced sidewall roughness, the inherent high aspect ratio, the weak crystal orientation dependence, impurity doping and solution concentration dependent porosity, as well as the applicability of MacEtch to non-Si based semiconductor materials including III-V compound semiconductors. Also reviewed are applications of MacEtch produced high aspect ratio Si nanostructures in photovoltaics, where the p-n junction can be in the planar Si tray, core-shell, or axial geometry, with nanowire, micropillar, or hole arrays serving as light trapping or carrier collection structures. The prospect of using MacEtch to improve the cost and efficiency of photovoltaic cells is discussed. (c) 2011 Elsevier Ltd. All rights reserved.

• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• OSTI ID: 1211029
• Journal Information: Current Opinion in Solid State and Materials Science, Journal Name: Current Opinion in Solid State and Materials Science Journal Issue: 2 Vol. 16; ISSN 1359-0286
• Country of Publication: United States
• Language: English