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Advanced Numerical Methods and Software Approaches for Semiconductor Device Simulation

Journal Article · · VLSI Design
DOI:https://doi.org/10.1155/2000/43903· OSTI ID:1198028
 [1];  [1];  [2]
  1. ASE-EM, TICAM, The University of Texas at Austin, Austin, Texas 78712, USA
  2. Sandia National Laboratories, Albuquerque, NM 87185, USA

In this article we concisely present several modern strategies that are applicable to driftdominated carrier transport in higher-order deterministic models such as the driftdiffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of “upwind” and artificial dissipation schemes, generalization of the traditional Scharfetter – Gummel approach, Petrov – Galerkin and streamline-upwind Petrov Galerkin (SUPG), “entropy” variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of the methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. We have included numerical examples from our recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and we emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, we briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.

Sponsoring Organization:
USDOE
OSTI ID:
1198028
Alternate ID(s):
OSTI ID: 753386
Journal Information:
VLSI Design, Journal Name: VLSI Design Journal Issue: 4 Vol. 10; ISSN 1065-514X
Publisher:
Hindawi Publishing CorporationCopyright Statement
Country of Publication:
Country unknown/Code not available
Language:
English

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