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Electrically tunable infrared metamaterial devices

Patent ·
OSTI ID:1195934
;
A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
9,086,510
Application Number:
13/908,826
OSTI ID:
1195934
Country of Publication:
United States
Language:
English

References (8)

Long-wavelength interface modes in semiconductor layer structures journal January 2005
Optical properties of thin films and the Berreman effect journal December 1985
Reflectance spectrum of plasmon waveguide interband cascade lasers and observation of the Berreman effect journal August 2011
Electrically tunable infrared metamaterials based on depletion-type semiconductor devices journal November 2012
Berreman mode and epsilon near zero mode journal January 2012
Epsilon-Near-Zero Mode for Active Optoelectronic Devices journal December 2012
Infrared Absorption at Longitudinal Optic Frequency in Cubic Crystal Films journal June 1963
Plasma Resonance Absorption in Thin Metal Films journal November 1963

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Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS