Monolayer PtSe 2 , a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt
more »
- Chinese Academy of Sciences (CAS), Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
- Chinese Academy of Sciences (CAS), Beijing (China)
- Tsinghua Univ., Beijing (China)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Jeol Ltd., Tokyo (Japan)
- Chinese Academy of Sciences (CAS), Beijing (China); Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Hiroshima Univ., Higashi-Hiroshima (Japan)
- Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
- National Univ. of Singapore (Singapore)
- Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
For single-layer transition-metal dichalcogenides (TMDs) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, spintronics, catalysis, and so on. Here, we demonstrate the epitaxial growth of high-quality single-crystal, monolayer platinum diselenide (PtSe2), a new member of the layered TMDs family, by a single step of direct selenization of a Pt(111) substrate. We found that a combination of atomic-resolution experimental characterizations and first-principle theoretic calculations reveals the atomic structure of the monolayer PtSe2/Pt(111). Angle-resolved photoemission spectroscopy measurements confirm for the first time the semiconducting electronic structure of monolayer PtSe2 (in contrast to its semimetallic bulk counterpart). The photocatalytic activity of monolayer PtSe2 film is evaluated by a methylene-blue photodegradation experiment, demonstrating its practical application as a promising photocatalyst. Moreover, circular polarization calculations predict that monolayer PtSe2 has also potential applications in valleytronics.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- Grant/Contract Number:
- AC05-00OR22725; FG02-09ER46554
- OSTI ID:
- 1185929
- Alternate ID(s):
- OSTI ID: 1597683
- Journal Information:
- Nano Letters, Journal Name: Nano Letters Journal Issue: 6 Vol. 15; ISSN 1530-6984
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry
Dynamic Phase Engineering of Bendable Transition Metal Dichalcogenide Monolayers
Journal Article
·
Sun Nov 16 23:00:00 EST 2014
· Applied Physics Letters
·
OSTI ID:22391998
Dynamic Phase Engineering of Bendable Transition Metal Dichalcogenide Monolayers
Journal Article
·
Thu Mar 09 19:00:00 EST 2017
· Nano Letters
·
OSTI ID:1388557