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Electronic structure and optical properties of α-(Fe1-xVx)2O3 solid-solution thin films

Journal Article · · Applied Physics Letters, 106(4):041905
DOI:https://doi.org/10.1063/1.4906597· OSTI ID:1184902
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We have examined the effect of V doping on the electronic and optical properties of hematite (α-Fe2O3) by means of α-(Fe1-xVx)2O3 (0 ≤ x ≤ ~0.5) epitaxial films and theoretical modeling. The conductivity is enhanced by several orders of magnitude as x is increased, and this enhancement is manifested in x-ray photoelectron spectra by a growing Doniach-Sunjic tail on the O 1s peak, as well as by increasing intensity at the Fermi level in valence band spectra. Optical absorption shows a reduction in direct band gap by as much as 0.64 eV for x = 0.53 (Eg = 1.46 eV) relative to that of α-Fe2O3 (Eg = 2.10 eV). Detailed understanding of the character of the optical transitions in the alloys is achieved using first-principles calculations of the ground and excited states. These calculations reveal that V doping results in localized, occupied V 3d states which are hybridized with Fe states and located at approximately mid-gap in α Fe2O3. The lowest energy transitions involve electronic excitations from occupied V 3d orbitals to unoccupied Fe 3d* orbitals.
Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC05-76RL01830
OSTI ID:
1184902
Alternate ID(s):
OSTI ID: 22415187
Report Number(s):
PNNL-SA-106515; 48144; KC0304030
Journal Information:
Applied Physics Letters, 106(4):041905, Journal Name: Applied Physics Letters, 106(4):041905
Country of Publication:
United States
Language:
English

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Related Subjects

Environmental Molecular Sciences Laboratory
N00784
N06266
Thin films