Transistor-based particle detection systems and methods
Patent
·
OSTI ID:1183932
Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.
- Research Organization:
- Purdue Research Foundation, West Lafayette, IN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC52-08NA28617
- Assignee:
- Purdue Research Foundation (West Lafayette, IN)
- Patent Number(s):
- 9,052,281
- Application Number:
- 13/748,171
- OSTI ID:
- 1183932
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electrodynamic model of the field effect transistor application for THz/subTHz radiation detection: Subthreshold and above threshold operation
Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas
New Insights into Fully-Depleted SOI Transistor Response During Total-Dose Irradiation
Journal Article
·
2014
· Journal of Applied Physics
·
OSTI ID:22305846
Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas
Journal Article
·
2015
· Journal of Applied Physics
·
OSTI ID:22492975
New Insights into Fully-Depleted SOI Transistor Response During Total-Dose Irradiation
Conference
·
1999
·
OSTI ID:14030