Growth of highly doped {ital p}-type ZnTe films by pulsed laser ablation in molecular nitrogen
- Solid State Division, Oak Ridge National Laboratory, MS 6056, Oak Ridge, Tennessee 37831 (United States)
- Division of Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States)
- Institute of Spectroscopy, Troitsk (Russian Federation)
Highly N-doped (mid-10{sup 19} to {gt}10{sup 20} cm{sup {minus}3}) ZnTe/(001)GaAs epitaxial films have been grown by pulsed laser ablation (PLA) of a stoichiometric ZnTe target in a high-purity N{sub 2} ambient (50 to 200 mTorr) without the use of any assisting dc or ac plasma source. Unlike recent experiments in which atomic N, extracted from dc and rf plasma sources, was used to produce N-doping during molecular beam epitaxy, spectroscopic measurements performed during PLA of ZnTe in N{sub 2} do not reveal the presence of atomic N. This suggests that the high hole concentrations in laser ablated ZnTe are produced by a new mechanism, possibly energetic beam-induced reactions with excited N{sub 2} adsorbed on the film surface, and/or transient formation of Zn--N complexes in the energetic ablation plume. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 118390
- Journal Information:
- Applied Physics Letters, Vol. 67, Issue 17; Other Information: PBD: 23 Oct 1995
- Country of Publication:
- United States
- Language:
- English
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