Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene [Plus Supplemental Information]

Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J.; Robinson, Jeremy T.; Wallace, Robert M.; Mayer, Theresa S.; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A.

doi:10.1021/nl503144a

Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene [Plus Supplemental Information]

Journal Article · Mon Nov 10 00:00:00 EST 2014 · Nano Letters

DOI:https://doi.org/10.1021/nl503144a· OSTI ID:1183087

Lin, Yu-Chuan ^[1]; Chang, Chih-Yuan S. ^[2]; Ghosh, Ram Krishna ^[3]; Li, Jie ^[3]; Zhu, Hui ^[4]; Addou, Rafik ^[4]; Diaconescu, Bogdan ^[5]; Ohta, Taisuke ^[5]; Peng, Xin ^[4]; Lu, Ning; Kim, Moon J. ^[4]; Robinson, Jeremy T. ^[6]; Wallace, Robert M. ^[5]; Mayer, Theresa S. ^[3]; Datta, Suman ^[3]; Li, Lain-Jong ^[2]; Robinson, Joshua A. ^[1]

Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering and Center for 2-Dimensional and Layered Materials
Inst. of Atomic and Molecular Sciences, Tapei (Taiwan)
Pennsylvania State Univ., University Park, PA (United States). Dept. of Electrical Engineering
Univ. of Texas at Dallas, Richardson, TX (United States). Dept. of Materials Science and Engineering
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Naval Research Lab. (NRL), Washington, DC (United States)

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. We report the direct growth of highly crystalline, monolayer tungsten diselenide (WSe₂) on epitaxial graphene (EG). Raman spectroscopy and photoluminescence confirms high-quality WSe₂ monolayers; while transmission electron microscopy shows an atomically sharp interface and low energy electron diffraction confirms near perfect orientation between WSe₂ and EG. Vertical transport measurements across the WSe₂/EG heterostructure provides evidence that a tunnel barrier exists due to the van der Waals gap, and is supported by density functional theory that predicts a 1.6 eV barrier for transport from WSe₂ to graphene.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1183087

Report Number(s):: SAND--2014-16778J; 536647

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 12 Vol. 14; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (30)

The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 Buscema, Michele; Steele, Gary A.; van der Zant, Herre S. J. Nano Research, Vol. 7, Issue 4 https://doi.org/10.1007/s12274-014-0424-0	journal	April 2014
Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system Koma, Atsushi Thin Solid Films, Vol. 216, Issue 1 https://doi.org/10.1016/0040-6090(92)90872-9	journal	August 1992
Epitaxial graphene de Heer, Walt A.; Berger, Claire; Wu, Xiaosong Solid State Communications, Vol. 143, Issue 1-2 https://doi.org/10.1016/j.ssc.2007.04.023	journal	July 2007
Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers Liu, Zheng; Song, Li; Zhao, Shizhen Nano Letters, Vol. 11, Issue 5 https://doi.org/10.1021/nl200464j	journal	May 2011
van der Waals Epitaxy of MoS₂ Layers Using Graphene As Growth Templates Shi, Yumeng; Zhou, Wu; Lu, Ang-Yu Nano Letters, Vol. 12, Issue 6, p. 2784-2791 https://doi.org/10.1021/nl204562j	journal	May 2012
Epitaxial Monolayer MoS ₂ on Mica with Novel Photoluminescence Ji, Qingqing; Zhang, Yanfeng; Gao, Teng Nano Letters, Vol. 13, Issue 8 https://doi.org/10.1021/nl401938t	journal	July 2013
Tunable Photoluminescence of Monolayer MoS ₂ via Chemical Doping Mouri, Shinichiro; Miyauchi, Yuhei; Matsuda, Kazunari Nano Letters, Vol. 13, Issue 12 https://doi.org/10.1021/nl403036h	journal	November 2013
Direct Imaging of Band Profile in Single Layer MoS ₂ on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung Nano Letters, Vol. 14, Issue 5 https://doi.org/10.1021/nl501133c	journal	April 2014
Electronic Hybridization of Large-Area Stacked Graphene Films Robinson, Jeremy T.; Schmucker, Scott W.; Diaconescu, C. Bogdan ACS Nano, Vol. 7, Issue 1 https://doi.org/10.1021/nn304834p	journal	December 2012
Large-Area Single-Layer MoSe ₂ and Its van der Waals Heterostructures Shim, Gi Woong; Yoo, Kwonjae; Seo, Seung-Bum ACS Nano, Vol. 8, Issue 7 https://doi.org/10.1021/nn405685j	journal	June 2014
Large-Area Synthesis of Highly Crystalline WSe ₂ Monolayers and Device Applications Huang, Jing-Kai; Pu, Jiang; Hsu, Chang-Lung ACS Nano, Vol. 8, Issue 1 https://doi.org/10.1021/nn405719x	journal	December 2013
Direct Synthesis of van der Waals Solids Lin, Yu-Chuan; Lu, Ning; Perea-Lopez, Nestor ACS Nano, Vol. 8, Issue 4 https://doi.org/10.1021/nn5003858	journal	March 2014
Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments McDonnell, Stephen; Azcatl, Angelica; Addou, Rafik ACS Nano, Vol. 8, Issue 6 https://doi.org/10.1021/nn501728w	journal	May 2014
Nucleation of Epitaxial Graphene on SiC(0001) Robinson, Joshua; Weng, Xiaojun; Trumbull, Kathleen ACS Nano, Vol. 4, Issue 1 https://doi.org/10.1021/nn901248j	journal	December 2009
Graphene and boron nitride lateral heterostructures for atomically thin circuitry Levendorf, Mark P.; Kim, Cheol-Joo; Brown, Lola Nature, Vol. 488, Issue 7413, p. 627-632 https://doi.org/10.1038/nature11408	journal	August 2012
Van der Waals heterostructures Geim, A. K.; Grigorieva, I. V. Nature, Vol. 499, Issue 7459, p. 419-425 https://doi.org/10.1038/nature12385	journal	July 2013
Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices Haigh, S. J.; Gholinia, A.; Jalil, R. Nature Materials, Vol. 11, Issue 9 https://doi.org/10.1038/nmat3386	journal	July 2012
Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 Zhang, Yi; Chang, Tay-Rong; Zhou, Bo Nature Nanotechnology, Vol. 9, Issue 2 https://doi.org/10.1038/nnano.2013.277	journal	December 2013
Atomically thin p–n junctions with van der Waals heterointerfaces Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M. Nature Nanotechnology, Vol. 9, Issue 9 https://doi.org/10.1038/nnano.2014.150	journal	August 2014
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures Zhang, Wenjing; Chuu, Chih-Piao; Huang, Jing-Kai Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep03826	journal	January 2014
Interface properties of CVD grown graphene transferred onto MoS ₂ (0001) Coy Diaz, Horacio; Addou, Rafik; Batzill, Matthias Nanoscale, Vol. 6, Issue 2 https://doi.org/10.1039/C3NR03692H	journal	January 2014
Structure of few-layer epitaxial graphene on 6H-SiC(0001) at atomic resolution Weng, Xiaojun; Robinson, Joshua A.; Trumbull, Kathleen Applied Physics Letters, Vol. 97, Issue 20 https://doi.org/10.1063/1.3517505	journal	November 2010
WSe₂ field effect transistors with enhanced ambipolar characteristics Das, Saptarshi; Appenzeller, Joerg Applied Physics Letters, Vol. 103, Issue 10, Article No. 103501 https://doi.org/10.1063/1.4820408	journal	September 2013
The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties Wilson, J. A.; Yoffe, A. D. Advances in Physics, Vol. 18, Issue 73 https://doi.org/10.1080/00018736900101307	journal	May 1969
Homogeneous large-area graphene layer growth on 6 H -SiC(0001) Virojanadara, C.; Syväjarvi, M.; Yakimova, R. Physical Review B, Vol. 78, Issue 24 https://doi.org/10.1103/PhysRevB.78.245403	journal	December 2008
Long-range atomic ordering and variable interlayer interactions in two overlapping graphene lattices with stacking misorientations Ohta, Taisuke; Beechem, Thomas E.; Robinson, Jeremy T. Physical Review B, Vol. 85, Issue 7 https://doi.org/10.1103/PhysRevB.85.075415	journal	February 2012
Probing substrate-dependent long-range surface structure of single-layer and multilayer Mo S 2 by low-energy electron microscopy and microprobe diffraction Yeh, Po-Chun; Jin, Wencan; Zaki, Nader Physical Review B, Vol. 89, Issue 15 https://doi.org/10.1103/PhysRevB.89.155408	journal	April 2014
Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation Riedl, C.; Coletti, C.; Iwasaki, T. Physical Review Letters, Vol. 103, Issue 24 https://doi.org/10.1103/PhysRevLett.103.246804	journal	December 2009
Evidence for Interlayer Coupling and Moiré Periodic Potentials in Twisted Bilayer Graphene Ohta, Taisuke; Robinson, Jeremy T.; Feibelman, Peter J. Physical Review Letters, Vol. 109, Issue 18 https://doi.org/10.1103/PhysRevLett.109.186807	journal	November 2012
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures Britnell, L.; Gorbachev, R. V.; Jalil, R. Science, Vol. 335, Issue 6071 https://doi.org/10.1126/science.1218461	journal	February 2012

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The vertical growth of MoS ₂ layers at the initial stage of CVD from first-principles Xue, Xiong-Xiong; Feng, Yexin; Chen, Keqiu The Journal of Chemical Physics, Vol. 148, Issue 13 https://doi.org/10.1063/1.5010996	journal	April 2018
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One dimensional metallic edges in atomically thin WSe ₂ induced by air exposure Addou, Rafik; Smyth, Christopher M.; Noh, Ji-Young 2D Materials, Vol. 5, Issue 2 https://doi.org/10.1088/2053-1583/aab0cd	journal	March 2018
Multimodal spectromicroscopy of monolayer WS ₂ enabled by ultra-clean van der Waals epitaxy Kastl, C.; Chen, C. T.; Koch, R. J. 2D Materials, Vol. 5, Issue 4 https://doi.org/10.1088/2053-1583/aad21c	journal	July 2018
WSe ₂ homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates Pan, Yi; Fölsch, Stefan; Lin, Yu-Chuan 2D Materials, Vol. 6, Issue 2 https://doi.org/10.1088/2053-1583/aaf58c	journal	January 2019
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Theory of optically induced Förster coupling in van der Waals coupled heterostructures Selig, Malte; Malic, Ermin; Ahn, Kwang Jun Physical Review B, Vol. 99, Issue 3 https://doi.org/10.1103/physrevb.99.035420	journal	January 2019
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