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Layer Disordering and Doping Compensation of an Intersubband AlGaN/AlN Superlattice by Silicon Implantation.

Journal Article · Fri Aug 01 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896783· OSTI ID:1183076

Wierer, Jonathan; Allerman, Andrew A.; Skogen, Erik J.; Tauke-Pedretti, Anna; Alford, Charles; Vawter, Gregory A.; Montano, Ines

Abstract not provided.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1183076

Report Number(s):: SAND2014-16651J; 534549

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 105; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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