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Probing limits of STM field emission patterned Si:P $$\delta$$-doped devices.

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4899255· OSTI ID:1183006
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Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1183006
Report Number(s):
SAND2014-16410J; 534198
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 105; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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