Anisotropic giant magnetoresistance in NbSb₂

Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

doi:10.1038/srep07328

Title: Anisotropic giant magnetoresistance in NbSb₂

Journal Article · Fri Dec 05 00:00:00 EST 2014 · Scientific Reports

DOI:https://doi.org/10.1038/srep07328· OSTI ID:1182527

Wang, Kefeng ^[1]; Graf, D. ^[2]; Li, Lijun ^[1]; Wang, Limin ^[1]; Petrovic, C. ^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Florida State Univ., Tallahassee, FL (United States)

We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10⁵% in 2 K and 9 T field, and 4.3 × 10⁶% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb₂. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704

OSTI ID:: 1182527

Report Number(s):: BNL-107585-2015-JA; R&D Project: PM016; KC0201050

Journal Information:: Scientific Reports, Vol. 4; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 145 works

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