Temperature-driven band inversion in : Optical and Hall effect studies
- Univ. of Florida, Gainesville, FL (United States)
- Florida State Univ., Tallahassee, FL (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Ramapo College, Mahwah, NJ (United States)
Optical and Hall-effect measurements have been performed on single crystals of Pb₀.₇₇Sn₀.₂₃Se, a IV-VI mixed chalcogenide. The temperature dependent (10–300 K) reflectance was measured over 40–7000 cm⁻¹ (5–870 meV) with an extension to 15,500 cm⁻¹ (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy optical spectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Thus, density function theory calculation for the electronic band structure also make similar predictions.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC00112704; AC02-98CH10886
- OSTI ID:
- 1182520
- Alternate ID(s):
- OSTI ID: 1179976
- Report Number(s):
- BNL-107518-2015-JA; PRBMDO; R&D Project: PO010; KC0201060
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 90, Issue 23; ISSN 1098-0121
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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