skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Toward reversing Joule heating with a phonon-absorbing heterobarrier

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
 [1];  [2]
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. Univ. of Michigan, Ann Arbor, MI (United States)

Using a graded heterobarrier placed along an electron channel, phonons emitted in Joule heating are recycled in situ by increasing the entropy of phonon-absorbing electrons. The asymmetric electric potential distribution created by alloy grading separates the phonon absorption and emission regions, and emission in the larger effective-mass region causes momentum relaxation with smaller electron kinetic energy loss. These lead to smaller overall phonon emission and simultaneous potential-gain and self-cooling effects. Larger potential is gained with lower current and higher optical-phonon temperature. The self-consistent Monte Carlo simulations complying with the lateral momentum conservation combined with the entropy analysis are applied to a GaAs:Al electron channel with a graded heterobarrier, and under ideal lateral thermal isolation from surroundings, the phonon recycling efficiency reaches 25% of the reversible limit at 350 K, and it increases with temperature. In conclusion, the lateral momentum contributes to the transmission across the barrier, so partially nonconserving lateral momentum electron scattering (rough interface) can improve efficiency.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR)
Grant/Contract Number:
SC0000957; CBET 1332807; AC02-05CH11231
OSTI ID:
1370116
Alternate ID(s):
OSTI ID: 1181577
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Vol. 91, Issue 8; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 1098-0121
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

References (27)

Semiconducting and other major properties of gallium arsenide journal October 1982
Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition journal March 1993
Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface journal April 1990
Thermoelectric transport perpendicular to thin-film heterostructures calculated using the Monte Carlo technique journal November 2006
The Physics of Phonons journal December 1991
Monte Carlo Simulation of Semiconductor Devices book January 1993
Heterobarrier for converting hot-phonon energy to electric potential journal February 2013
Improved Thermoelectric Power Factor in Metal-Based Superlattices journal March 2004
Nonequilibrium phonon effect on time-dependent relaxation of hot electrons in semiconductor heterojunctions journal January 1987
Monte Carlo study of electron heating and enhanced thermionic emission by hot phonons in heterolayers journal April 1988
Nonequilibrium optical phonon generation by steady-state electron transport in quantum-cascade lasers journal June 2002
Entropy production in hot-phonon energy conversion to electric potential journal August 2013
On momentum conservation and thermionic emission cooling journal March 2010
Transport Measurements Across a Tunable Potential Barrier in Graphene journal June 2007
GaAs, AlAs, and Al x Ga 1− x As: Material parameters for use in research and device applications journal August 1985
Minimizing Heat Generation in Solid-State Lasers journal July 2010
Transport Properties of GaAs journal October 1968
Gallium arsenide thermal conductivity and optical phonon relaxation times from first-principles calculations journal January 2013
Hot-phonon temperature and lifetime in biased 4H-SiC journal December 2004
Carrier transport across heterojunction interfaces journal March 1979
Electron drift velocity in n-GaAs at high electric fields journal March 1977
Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions journal August 2002
Al x Ga 1 x As intervalley scattering rates from field-assisted photoemission spectroscopy journal February 1995
Monte Carlo simulation of scattering-induced negative differential resistance in AlGaAs/GaAs quantum wells journal June 1986
Thermodynamics of radiation-balanced lasing journal January 2003
Enhanced solid-state thermionic emission in nonplanar heterostructures journal January 2006
Determination of the conduction‐band offset of a single AlGaAs barrier layer using deep level transient spectroscopy journal May 1993

Cited By (1)

From thermoelectricity to phonoelectricity journal June 2019

Similar Records

Bilayer graphene phonovoltaic-FET: In situ phonon recycling
Journal Article · Wed Nov 29 00:00:00 EST 2017 · Physical Review B · OSTI ID:1370116

Time-resolved study of the extreme-ultraviolet emission and plasma dynamics of a sub-Joule, fast capillary discharge
Journal Article · Sat Aug 15 00:00:00 EDT 2015 · Physics of Plasmas · OSTI ID:1370116

Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect
Journal Article · Wed Jan 14 00:00:00 EST 2015 · Journal of Applied Physics · OSTI ID:1370116

Related Subjects