Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-Doped ${\mathrm{SrTiO}}_3$ Substrate

Journal Article · Thu Jan 22 00:00:00 EST 2015 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.114.037002· OSTI ID:1181323

Cui, Y. -T.; Moore, R. G.; Zhang, A. -M.; Tian, Y.; Lee, J. J.; Schmitt, F. T.; Zhang, W. -H.; Li, W.; Yi, M.; Liu, Z. -K.; Hashimoto, M.; Zhang, Y.; Lu, D. -H.; Devereaux, T. P.; Wang, L. -L.; Ma, X. -C.; Zhang, Q. -M.; Xue, Q. -K.; Lee, D. -H.; Shen, Z. -X.

• Sponsoring Organization: USDOE
• Grant/Contract Number: AC02-05CH11231
• OSTI ID: 1181323
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Vol. 114 Journal Issue: 3; ISSN 0031-9007
• Publisher: American Physical Society
• Country of Publication: United States
• Language: English