Point defect stability in a semicoherent metallic interface
- Univ. of Oviedo (Spain)
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Here, we introduce a comprehensive density functional theory (DFT) -based study of different aspects of one vacancy and He impurity atom behavior at semicoherent interfaces between the low-solubility transition metals Cu and Nb. Such interfaces have not been previously modeled using DFT. A thorough analysis of the stability and mobility of the two types of defects at the interfaces and neighboring internal layers has been performed and the results have been compared to the equivalent cases in the pure metallic matrices. The different behavior of fcc and bcc metals on both sides of the interface has been specifically assessed. The modeling effort undertaken is the initial attempt to study the stability and defect energetics of noncoherent Cu/Nb interfaces from first principles, in order to assess their potential use in radiation-resistant materials.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center for Materials at Irradiation and Mechanical Extremes (CMIME); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- 2008LANL1026
- OSTI ID:
- 1369967
- Alternate ID(s):
- OSTI ID: 1179934
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 91, Issue 6; Related Information: CMIME partners with Los Alamos National Laboratory (lead); Carnegie Mellon University; University of Illinois, Urbana Champaign; Massachusetts Institute of Technology; University of Nebraska; ISSN 1098-0121
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Vacancy assisted He-interstitial clustering and their elemental interaction at fcc-bcc semicoherent metallic interface
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journal | March 2018 |
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