The fundamental downscaling limit of field effect transistors

Journal Article · Mon May 11 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4919871· OSTI ID:1179740

Mamaluy, Denis; Gao, Xujiao

Not Available

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE; USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1179740
• Alternate ID(s): OSTI ID: 1214578; OSTI ID: 1420512; OSTI ID: 22399060; OSTI ID: 1235268
• Report Number(s): SAND--2015-2229J
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 106; ISSN 0003-6951
• Publisher: American Institute of Physics
• Country of Publication: United States
• Language: English

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