High sensitivity, solid state neutron detector
An apparatus (200) for detecting slow or thermal neutrons (160). The apparatus (200) includes an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-08GO28308
- Assignee:
- lliance for Sustainable Energy, LLC (Golden, CO)
- Patent Number(s):
- 9,029,792
- Application Number:
- 14/026,429
- OSTI ID:
- 1179226
- Country of Publication:
- United States
- Language:
- English
Self-biased boron-10 coated high-purity epitaxial GaAs thermal neutron detectors
|
journal | January 2000 |
High efficiency neutron sensitive amorphous silicon pixel detectors
|
journal | January 1994 |
Amorphous silicon position sensitive neutron detector
|
journal | January 1992 |
Neutron detection with a silicon PIN photodiode and 6LiF converter
|
journal | October 2003 |
| Designs for thin-film-coated semiconductor thermal neutron detectors | conference | January 2002 |
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