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Lithium-drifted silicon detector with segmented contacts

Patent ·
OSTI ID:1175789
A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.
Research Organization:
The Regents of the University of California, Oakland, CA (United States) ; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-76SF00098
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
7,060,523
Application Number:
10/845,600
OSTI ID:
1175789
Country of Publication:
United States
Language:
English

References (5)

Development of double-sided microstructured Si(Li) detectors journal August 2002
Thick silicon strip detectors
  • Riepe, Georg; Protić, Davor
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 226, Issue 1 https://doi.org/10.1016/0168-9002(84)90175-X
journal September 1984
Amorphous Silicon/Crystalline Silicon Heterojunctions in Nuclear Radiation Detector Fabrication journal January 1998
Development of transmission si(li) detectors journal August 2003
Large-area Si(Li) orthogonal-strip detectors journal June 2004

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