Npn double heterostructure bipolar transistor with ingaasn base region
Patent
·
OSTI ID:1174958
An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.
- Research Organization:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 6,765,242
- Application Number:
- 09/547,152
- OSTI ID:
- 1174958
- Country of Publication:
- United States
- Language:
- English
Annealing behavior of p -type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy
|
journal | September 1999 |
Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities
|
journal | January 2000 |
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
|
journal | February 1996 |
DC characteristics of MOVPE-grown Npn InGaP/InGaAsN DHBTs
|
journal | January 2000 |
Similar Records
InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor
InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor
Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors
Journal Article
·
Mon Apr 17 00:00:00 EDT 2000
· Applied Physics Letters
·
OSTI ID:1174958
+3 more
InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor
Journal Article
·
Mon Jan 10 00:00:00 EST 2000
·
OSTI ID:1174958
+3 more
Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors
Conference
·
Tue Aug 01 00:00:00 EDT 2000
·
OSTI ID:1174958
+5 more