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U.S. Department of Energy
Office of Scientific and Technical Information

Buffer layers and articles for electronic devices

Patent ·
OSTI ID:1174955
Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.
Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-00OR22725
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Number(s):
6,764,770
Application Number:
10/324,883
OSTI ID:
1174955
Country of Publication:
United States
Language:
English

References (2)

Material characteristics of perovskite manganese oxide thin films for bolometric applications journal October 1997
Anomalous Magnetotransport Properties of Pr 1- x Ca x MnO 3 journal October 1995

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