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Title: Method for improving the stability of amorphous silicon

Abstract

A method of producing a metastable degradation resistant amorphous hydrogenated silicon film is provided, which comprises the steps of growing a hydrogenated amorphous silicon film, the film having an exposed surface, illuminating the surface using an essentially blue or ultraviolet light to form high densities of a light induced defect near the surface, and etching the surface to remove the defect.

Inventors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174791
Patent Number(s):
6,713,400
Application Number:
09/714,331
Assignee:
Midwest Research Institute (Kansas City, MO) OSTI
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Branz, Howard M. Method for improving the stability of amorphous silicon. United States: N. p., 2004. Web.
Branz, Howard M. Method for improving the stability of amorphous silicon. United States.
Branz, Howard M. Tue . "Method for improving the stability of amorphous silicon". United States. https://www.osti.gov/servlets/purl/1174791.
@article{osti_1174791,
title = {Method for improving the stability of amorphous silicon},
author = {Branz, Howard M.},
abstractNote = {A method of producing a metastable degradation resistant amorphous hydrogenated silicon film is provided, which comprises the steps of growing a hydrogenated amorphous silicon film, the film having an exposed surface, illuminating the surface using an essentially blue or ultraviolet light to form high densities of a light induced defect near the surface, and etching the surface to remove the defect.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {3}
}

Patent:

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