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Title: Photonically engineered incandescent emitter

Patent ·
OSTI ID:1174466
; ; ;

A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.

Research Organization:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
6,611,085
Application Number:
09/940,962
OSTI ID:
1174466
Country of Publication:
United States
Language:
English

References (7)

Tuned Infrared Emission From Lithographically-Defined Silicon Surface Structures journal January 1999
Metallic photonic band-gap materials journal October 1995
Nanostructured surfaces for tuned infrared emission for spectroscopic applications conference April 2000
Enhancement and suppression of thermal emission by a three-dimensional photonic crystal journal July 2000
Photonic crystals for narrow-band infrared emission conference February 2002
Development of optical MEMS carbon dioxide sensors conference October 2001
A three-dimensional photonic crystal operating at infrared wavelengths journal July 1998

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Related Subjects

36 MATERIALS SCIENCE