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Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

Patent ·
OSTI ID:1167025
There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.
Research Organization:
The Regents of the University of Michigan, Ann Arbor, MI (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
SC0001013
Assignee:
The Regents of the University of Michigan (Ann Arbor, MI)
Patent Number(s):
8,927,319
Application Number:
13/750,660
OSTI ID:
1167025
Country of Publication:
United States
Language:
English

References (5)

Lightweight, low cost GaAs solar cells on 4″ epitaxial liftoff (ELO) wafers conference May 2008
Development status of “Space Solar Sheet” conference May 2008
Paper-Thin InGaP/ GaAs Solar Cells conference May 2006
Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate journal March 1997
Large area, thin film epitaxial lift off III/V solar cells conference January 1996