p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells
Patent
·
OSTI ID:1164344
The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.
- Research Organization:
- Northwestern Univ., Evanston, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-06ER46320
- Assignee:
- Northwestern University (Evanston, IL)
- Patent Number(s):
- 8,895,848
- Application Number:
- 12/191,407
- OSTI ID:
- 1164344
- Resource Relation:
- Patent File Date: 2008 Aug 14
- Country of Publication:
- United States
- Language:
- English
Similar Records
TFB:TPDSi2 interfacial layer usable in organic photovoltaic cells
Polymer Solar Cells with 18.74% Efficiency: From Bulk Heterojunction to Interdigitated Bulk Heterojunction
Quantifying the Effects of Interfacial Electric Fields and Local Crystallinity on Polymer-Fullerene Bulk Heterojunction Solar Cell Performance
Patent
·
Tue Feb 15 00:00:00 EST 2011
·
OSTI ID:1164344
Polymer Solar Cells with 18.74% Efficiency: From Bulk Heterojunction to Interdigitated Bulk Heterojunction
Journal Article
·
Wed Oct 13 00:00:00 EDT 2021
· Advanced Functional Materials
·
OSTI ID:1164344
+4 more
Quantifying the Effects of Interfacial Electric Fields and Local Crystallinity on Polymer-Fullerene Bulk Heterojunction Solar Cell Performance
Journal Article
·
Tue May 17 00:00:00 EDT 2011
· Advanced Functional Materials
·
OSTI ID:1164344
+3 more