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Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

Patent ·
OSTI ID:1163851
The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
Assignee:
Honda Motor Co., Ltd. (Tokyo, JP)
Patent Number(s):
8,840,724
Application Number:
12/236,144
OSTI ID:
1163851
Country of Publication:
United States
Language:
English

References (9)

A scalable CVD method for the synthesis of single-walled carbon nanotubes with high catalyst productivity journal May 2000
Effect of the Growth Temperature on the Diameter Distribution and Chirality of Single-Wall Carbon Nanotubes journal April 1998
A Simple and Complete Purification of Single-Walled Carbon Nanotube Materials journal November 1999
Helical microtubules of graphitic carbon journal November 1991
C60: Buckminsterfullerene journal November 1985
Crystalline Ropes of Metallic Carbon Nanotubes journal July 1996
Carbon Nanotubes Grown on the Surface of Cathode Deposit by Arc Discharge journal September 1996
Large-scale synthesis of single-wall carbon nanotubes by catalytic chemical vapor deposition (CCVD) method journal January 2000
Catalytic growth of single-walled manotubes by laser vaporization journal September 1995

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