Front contact solar cell with formed emitter
Patent
·
OSTI ID:1163238
A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.
- Research Organization:
- SunPower Corporation, San Jose, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- ;
- Other Award/Contract Number:
- FC36-076017043
- Assignee:
- SunPower Corporation (San Jose, CA)
- Patent Number(s):
- 8,878,053
- Application Number:
- 13/495,577
- OSTI ID:
- 1163238
- Country of Publication:
- United States
- Language:
- English
Heavily doped polysilicon-contact solar cells
|
journal | July 1985 |
Series resistance in double-polysilicon-contacted silicon solar cells
|
conference | January 1996 |
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