Synchrotron X-ray Topography Studies of the Evolution of the Defect Microstructure in Physical Vapor Transport Grown 4H-SiC Single Crystals
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1162973
- Report Number(s):
- BNL-106919-2014-JA
- Journal Information:
- ECS Transactions, Vol. 2013, Issue 58
- Country of Publication:
- United States
- Language:
- English
Similar Records
Synchrotron X-ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with c-component of Burgers Vector in PVT-Grown 4H-SiC
POLYTYPE IDENTIFICATION IN HETEROEPITAXIAL 3C-SIC GROWN ON 4H-SIC MESAS USING SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHY
Characterization of Dislocations in 4H-SiC Single Crystals at the Initial Growth Stage by Synchrotron X-ray Topography
Journal Article
·
Tue May 01 00:00:00 EDT 2012
· Materials Science Forum
·
OSTI ID:1162973
+6 more
POLYTYPE IDENTIFICATION IN HETEROEPITAXIAL 3C-SIC GROWN ON 4H-SIC MESAS USING SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHY
Journal Article
·
Tue Jan 01 00:00:00 EST 2002
· Journal of Crystal Growth
·
OSTI ID:1162973
Characterization of Dislocations in 4H-SiC Single Crystals at the Initial Growth Stage by Synchrotron X-ray Topography
Journal Article
·
Mon Nov 02 00:00:00 EST 2020
· ECS Trans.
·
OSTI ID:1162973
+2 more