Carrier Dynamics and Doping Profiles in GaAs Nanosheets
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center for Energy Nanoscience (CEN)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- SC0001013
- OSTI ID:
- 1161993
- Journal Information:
- Nano Research, Vol. 7; Related Information: CEN partners with University of Southern California (lead); University of Illinois, Urbana-Champaign; University of Michigan; University of Virginia
- Country of Publication:
- United States
- Language:
- English
Similar Records
Carrier dynamics and doping profiles in GaAs nanosheets
Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures
Effects of Surface Passivation on Twin-Free GaAs Nanosheets
Journal Article
·
Fri Jan 03 00:00:00 EST 2014
· Nano Research
·
OSTI ID:1161993
+6 more
Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures
Journal Article
·
Wed Jun 12 00:00:00 EDT 2013
· Nano Lett.
·
OSTI ID:1161993
+3 more
Effects of Surface Passivation on Twin-Free GaAs Nanosheets
Journal Article
·
Tue Feb 24 00:00:00 EST 2015
· ACS Nano
·
OSTI ID:1161993
+5 more