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Title: Modeling of threshold and dynamic behavior of organic nanostructured lasers

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC); Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1161821
DOE Contract Number:
SC0001299; FG02-09ER46577
Resource Type:
Journal Article
Resource Relation:
Journal Name: J. Mater. Chem.; Journal Volume: 2; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Chua, S L, Zhen, B, Lee, J, Bravo-Abad, J, Shapira, O, and Soljacic, Marin. Modeling of threshold and dynamic behavior of organic nanostructured lasers. United States: N. p., 2014. Web. doi:10.1039/c3tc31870b.
Chua, S L, Zhen, B, Lee, J, Bravo-Abad, J, Shapira, O, & Soljacic, Marin. Modeling of threshold and dynamic behavior of organic nanostructured lasers. United States. doi:10.1039/c3tc31870b.
Chua, S L, Zhen, B, Lee, J, Bravo-Abad, J, Shapira, O, and Soljacic, Marin. 2014. "Modeling of threshold and dynamic behavior of organic nanostructured lasers". United States. doi:10.1039/c3tc31870b.
@article{osti_1161821,
title = {Modeling of threshold and dynamic behavior of organic nanostructured lasers},
author = {Chua, S L and Zhen, B and Lee, J and Bravo-Abad, J and Shapira, O and Soljacic, Marin},
abstractNote = {},
doi = {10.1039/c3tc31870b},
journal = {J. Mater. Chem.},
number = ,
volume = 2,
place = {United States},
year = 2014,
month = 1
}
  • Fundamental characteristics of (111) oriented GaAs/AlGaAs graded-index separate-confinement-heterostructure single quantum well lasers have been compared with conventional (100) oriented lasers. In particular, the threshold current density J/sub th/ of (111) oriented lasers does not change with the well width L/sub z/ in the range of L/sub z/ = 30--100 A, which corresponds to an ideal extreme. The lowest J/sub th/ of 145 A/cm/sup 2/ together with a high characteristic temperature T/sub 0/ of 186 K in the threshold-temperature dependence has been achieved for an L/sub z/ of 40 A and a cavity length of 490 ..mu..m. The dependence of T/submore » 0/ on L/sub z/ showed that T/sub 0/ is maximum at L/sub z/approx.60 A for both (111) and (100) oriented lasers.« less
  • The axial and lateral variations of the optical mode and carrier-density profiles of a gain-guided double-heterostructure stripe-geometry semiconductor laser are analyzed theoretically using a beam-propagation method based on the fast Fourier transform technique. The numerical results near the laser threshold indicate that the characteristic length l/sub c/, over which the lateral mode adjusts itself to small axial variations in the laser structure, is typically in the range 50 ..mu..m< or approx. =l/sub c/< or approx. =100 ..mu..m.
  • The junction voltage distributions in InGaAsP mass-transported (MT) BH lasers are calculated by Schwarz-Christoffel transformation technique. The effects of MT layer thickness, active layer thickness, the hole concentration in upper confining layer, and of injected current through active layer on the leakage current through MT layer homojunction are analyzed. The guiding modes are divided into classes A and B according to a proposed ''transition mode'' by which the mode behavior of a symmetrical five-layer slab waveguide is analyzed in a rather comprehensive way. It is shown that the requirement for decreasing the threshold current and the requirement for lasing inmore » a single fundamental lateral mode are somewhat contradictory, so that the thickness of MT layer should have the optimum value in a certain sense.« less
  • The temperature dependence of the threshold current, differential quantum efficiency, and internal loss have been measured in the temperature range 10--293 /sup 0/K. The threshold current increases relatively slowly with temperature above 100 /sup 0/K and is independent of the impurity concentration. Theoretical calculation shows that this behavior is to be expected for a band-to-band transition that follows k selection. The threshold behavior at low temperatures (< or = 80 /sup 0/K) depends strongly on the type and concentration of the impurity. The relatively fast decrease in threshold below 100 /sup 0/K shows saturation for an active layer with n-typemore » impurities or with high-concentration p-type impurities. The saturation is attributed to the carrier diffusion length becoming smaller than the active-layer thickness. The internal differential quantum efficiency is near unity and is independent of temperature. The internal loss, however, decreases with temperature due to reduction in free-carrier absorption.« less