High speed low loss gate drive circuit
Patent
·
OSTI ID:1159924
A gate drive circuit includes an insulated gate semiconductor switch. A controlled current source is connected to the semiconductor switch gate terminal to provide a gate drive circuit that is responsive to recycled gate charge corresponding to an internal gate capacitance of the insulated gate semiconductor switch.
- Research Organization:
- GE Global Research, Niskayuna, New York (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC26-08NT05868
- Assignee:
- General Electric Company (Niskayuna, NY)
- Patent Number(s):
- 8,847,631
- Application Number:
- 13/336,669
- OSTI ID:
- 1159924
- Country of Publication:
- United States
- Language:
- English
Method and apparatus for driving a power device
|
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Output driver for energy recovery from inductor based sensor
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