Thermoelectric figure of merit of Te-doped n-Bi{sub 2}Te{sub 3} single crystals

Journal Article · Thu Sep 01 04:00:00 EDT 1994 · Inorganic Materials

OSTI ID:115180

Svechnikova, T E; Korzhuev, M A; Korenovskii, N L ^[1]

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1. Baikov Institute of Metallurgy, Moscow (Russian Federation); and others

In this paper, we focus on the cause of the variation in the thermoelectric figure of merit of n-Bi{sub 2}Te{sub 3} samples. Relatively moderate values of the thermoelectric figure of merit Z{sub max} in single crystals of n-Bi{sub 2}Te{sub 3}(Te), grown by the Czochralski technique from the tellurium-rich melt (nominal composition of the starting charge, 64.6 at % Te), result from a nonoptimal carrier concentration associated with an insufficient content of tellurium incorporated in the alloy matrix upon crystallization from the melt as well as from the presence of tellurium in the form of a distinct phase.

• OSTI ID: 115180
• Journal Information: Inorganic Materials, Journal Name: Inorganic Materials Journal Issue: 9 Vol. 30; ISSN INOMAF; ISSN 0020-1685
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH TELLURIDES
GRAIN BOUNDARIES
HEAT TREATMENTS
METALLURGICAL EFFECTS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHASE DIAGRAMS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
TELLURIUM