Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Pulsed and Steady-State Effects on Single Junction Si and Multiple Junction GaAs Photocells.

Conference ·
OSTI ID:1147520

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1147520
Report Number(s):
SAND2007-4636C; 522044
Country of Publication:
United States
Language:
English

Similar Records

Pulsed and Steady-State Radiation Effects on Single Junction Si and Multiple Junction GaAs Photocells.
Conference · Sun Jul 01 00:00:00 EDT 2007 · OSTI ID:1147678

Modeling Single Event Effects in GaAs and GaN Devices from 14 MeV Neutron-Induced Photocurrent Pulses.
Conference · Mon Jul 01 00:00:00 EDT 2019 · OSTI ID:1641068

SNL Si/GaAs Detector Development.
Conference · Sat Nov 30 23:00:00 EST 2019 · OSTI ID:1646356

Related Subjects