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IMproved InGaN LED Efficiency using Photonic Crystal Patterning and Surface Plasmon Enhanced Emission.

Journal Article · · Electrochemical Society (ESC) Transactions
DOI:https://doi.org/10.1149/1.2913075· OSTI ID:1146389

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1146389
Report Number(s):
SAND2008-1825J; 519245
Journal Information:
Electrochemical Society (ESC) Transactions, Journal Name: Electrochemical Society (ESC) Transactions
Country of Publication:
United States
Language:
English

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