High Current Rectification on Graphene-Boron Nitride Nanotube Heterojunctions.
Journal Article
·
· Nature Nanotechnology
OSTI ID:1146261
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1146261
- Report Number(s):
- SAND2014-4351J; 520097
- Journal Information:
- Nature Nanotechnology, Journal Name: Nature Nanotechnology
- Country of Publication:
- United States
- Language:
- English
Similar Records
Switching behaviors of graphene-boron nitride nanotube heterojunctions
High Yield Synthesis of Boron Nitride Nanotubes by Thermal Chemical Vapor Deposition.
Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon
Journal Article
·
Mon Jul 20 00:00:00 EDT 2015
· Scientific Reports
·
OSTI ID:1213398
High Yield Synthesis of Boron Nitride Nanotubes by Thermal Chemical Vapor Deposition.
Journal Article
·
Thu Jan 31 23:00:00 EST 2008
· JACS
·
OSTI ID:1146162
Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon
Journal Article
·
Fri Feb 06 23:00:00 EST 2015
· Journal of Applied Physics
·
OSTI ID:22413075