Excitation induced dephasing in semiconductor quantum dots.
Journal Article
·
· Physical Review B
- Kaiserslautern University of Technology, Kaiserslautern, Germany
- Philipps University, Marburg, Germany
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1144100
- Report Number(s):
- SAND2004-5915J; 267169
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 23 Vol. 70; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Similar Records
Anomalous carrier-induced dispersion in semiconductor quantum dots.
Quantum Optics in a Semiconductor Quantum Dot.
QCAD Simulation and Optimization of Semiconductor Quantum Dots.
Journal Article
·
Sun Jun 01 00:00:00 EDT 2003
· Proposed for publication in Optics (2002), and Optics & Photonics News (December 2002).
·
OSTI ID:926814
Quantum Optics in a Semiconductor Quantum Dot.
Journal Article
·
Tue Jan 31 23:00:00 EST 2012
· Proposed for publication in Journal for Modern Optics.
·
OSTI ID:1062864
QCAD Simulation and Optimization of Semiconductor Quantum Dots.
Journal Article
·
Mon Jul 01 00:00:00 EDT 2013
· Journal of Applied Physics
·
OSTI ID:1106705