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Title: Chemically homogeneous Pb(ZrTi)O3 thin films via ZnO-buffered platinized silicon substrates.

Abstract

Abstract not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1143431
Report Number(s):
SAND2011-7423C
482052
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 15th US-Japan Seminar on Dielectric and Piezoelectric Ceramics held November 6-9, 2011 in Kagoshima, Japan.
Country of Publication:
United States
Language:
English

Citation Formats

Ihlefeld, Jon., Brennecka, Geoffrey L., Kotula, Paul Gabriel, and Shelton, Christopher T. Chemically homogeneous Pb(ZrTi)O3 thin films via ZnO-buffered platinized silicon substrates.. United States: N. p., 2011. Web.
Ihlefeld, Jon., Brennecka, Geoffrey L., Kotula, Paul Gabriel, & Shelton, Christopher T. Chemically homogeneous Pb(ZrTi)O3 thin films via ZnO-buffered platinized silicon substrates.. United States.
Ihlefeld, Jon., Brennecka, Geoffrey L., Kotula, Paul Gabriel, and Shelton, Christopher T. Sat . "Chemically homogeneous Pb(ZrTi)O3 thin films via ZnO-buffered platinized silicon substrates.". United States. https://www.osti.gov/servlets/purl/1143431.
@article{osti_1143431,
title = {Chemically homogeneous Pb(ZrTi)O3 thin films via ZnO-buffered platinized silicon substrates.},
author = {Ihlefeld, Jon. and Brennecka, Geoffrey L. and Kotula, Paul Gabriel and Shelton, Christopher T.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {10}
}

Conference:
Other availability
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