Strain Relaxation in AIGaN Multilayer Structures by Inclined Dislocations.
Journal Article
·
· Journal of Applied Physics
OSTI ID:1143224
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1143224
- Report Number(s):
- SAND2008-5144J; 515120
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics
- Country of Publication:
- United States
- Language:
- English
Similar Records
Dislocation Reduction in AIGaN Grown on Patterned GaN.
Relaxation of compressively strained AlGaN by inclined threading dislocations.
An Atomistically Validated Continuum Model for Strain Relaxation and Misfit Dislocation Formation.
Journal Article
·
Sat Sep 01 00:00:00 EDT 2007
· Journal of Crystal Growth
·
OSTI ID:1147514
Relaxation of compressively strained AlGaN by inclined threading dislocations.
Journal Article
·
Wed Jun 01 00:00:00 EDT 2005
· Proposed for publication in Applied Physics Letters.
·
OSTI ID:973648
An Atomistically Validated Continuum Model for Strain Relaxation and Misfit Dislocation Formation.
Conference
·
Fri May 01 00:00:00 EDT 2015
·
OSTI ID:1252922