Atmospheric Pressure Graphitization of SiC(0001) - A Route Towards Wafer-Size Graphene Layers.
Journal Article
·
· Nature Materials
OSTI ID:1143016
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1143016
- Report Number(s):
- SAND2008-5716J; 511701
- Journal Information:
- Nature Materials, Journal Name: Nature Materials
- Country of Publication:
- United States
- Language:
- English
Similar Records
Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate
Controlled Covalent Modification of Epitaxial Single Layer Graphene on 6H-SiC (0001) with Aryliodonium Salts using Electrochemical Methods.
Controlled Covalent Modification of Epitaxial Single Layer Graphene on 6H-SiC (0001) with Aryliodonium Salts using Electrochemical Methods.
Journal Article
·
Sun Dec 07 23:00:00 EST 2014
· Applied Physics Letters
·
OSTI ID:22395497
Controlled Covalent Modification of Epitaxial Single Layer Graphene on 6H-SiC (0001) with Aryliodonium Salts using Electrochemical Methods.
Journal Article
·
Tue Jul 01 00:00:00 EDT 2014
· Faraday Discussions
·
OSTI ID:1182976
Controlled Covalent Modification of Epitaxial Single Layer Graphene on 6H-SiC (0001) with Aryliodonium Salts using Electrochemical Methods.
Journal Article
·
Fri Feb 28 23:00:00 EST 2014
· Faraday Discussions
·
OSTI ID:1141079