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Title: Defect-Domain Wall Interactions in Trigonal Ferroelectrics.


Abstract not provided.

; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
Report Number(s):
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Annual Review of Materials Research; Related Information: Proposed for publication in Annual Review of Materials Research.
Country of Publication:
United States

Citation Formats

Scrymgeour, David, Gopalan, Venkatraman, and Dierolf, Volkmar. Defect-Domain Wall Interactions in Trigonal Ferroelectrics.. United States: N. p., 2007. Web.
Scrymgeour, David, Gopalan, Venkatraman, & Dierolf, Volkmar. Defect-Domain Wall Interactions in Trigonal Ferroelectrics.. United States.
Scrymgeour, David, Gopalan, Venkatraman, and Dierolf, Volkmar. Sun . "Defect-Domain Wall Interactions in Trigonal Ferroelectrics.". United States. doi:.
title = {Defect-Domain Wall Interactions in Trigonal Ferroelectrics.},
author = {Scrymgeour, David and Gopalan, Venkatraman and Dierolf, Volkmar},
abstractNote = {Abstract not provided.},
doi = {},
journal = {Annual Review of Materials Research},
number = ,
volume = ,
place = {United States},
year = {Sun Apr 01 00:00:00 EDT 2007},
month = {Sun Apr 01 00:00:00 EDT 2007}
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  • The conductance of domain wall structures consisting of either stripes or cylindrical domains in multiaxial ferroelectric-semiconductors is analyzed. The effects of the flexoelectric coupling, domain size, wall tilt, and curvature on charge accumulation are analyzed using the Landau-Ginsburg Devonshire theory for polarization vector combined with the Poisson equation for charge distributions. The proximity and size effect of the electron and donor accumulation/depletion by thin stripe domains and cylindrical nanodomains are revealed. In contrast to thick domain stripes and wider cylindrical domains, in which the carrier accumulation (and so the static conductivity) sharply increases at the domain walls only, small nanodomainsmore » of radii less than 5-10 correlation lengths appeared conducting across the entire cross-section. Implications of such conductive nanosized channels may be promising for nanoelectronics.« less