Measurement of thermal conductivity in proton irradiated silicon

Journal Article · Tue Apr 01 00:00:00 EDT 2014 · Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and

DOI:https://doi.org/10.1016/j.nimb.2014.02.003· OSTI ID:1133884

Khafizov, Marat; Yablinsky, Clarissa; Allen, Todd; Hurley, David

We investigate the influence of proton irradiation on thermal conductivity in single crystal silicon. We apply laser based modulated thermoreflectance technique to extract the change in conductivity of the thin layer damaged by proton irradiation. Unlike time domain thermoreflectance techniques that require application of a metal film, we perform our measurement on uncoated samples. This provides greater sensitivity to the change in conductivity of the thin damaged layer. Using sample temperature as a parameter provides a means to deduce the primary defect structures that limit thermal transport. We find that under high temperature irradiation the degradation of thermal conductivity is caused primarily by extended defects.

• Research Organization: Idaho National Lab. (INL), Idaho Falls, ID (United States)
• Sponsoring Organization: DOE - SC
• DOE Contract Number: DE-AC07-05ID14517
• OSTI ID: 1133884
• Report Number(s): INL/JOU-13-30405
• Journal Information: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and, Vol. 325; ISSN 0168-583X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
extended defects
proton irradiation
silicon
thermal conductivity
thermal wave microscopy