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Nanostructures having high performance thermoelectric properties

Patent ·
OSTI ID:1132071

The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-05CH11231
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
8,729,381
Application Number:
12/673,366
OSTI ID:
1132071
Country of Publication:
United States
Language:
English

References (25)

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Synthesis of Ordered Single Crystal Silicon Nanowire Arrays journal August 2001
Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit journal February 2004

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