Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Precision Laser Annealing of Silicon devices for Enhanced Electro-Optic Performance.

Conference ·
OSTI ID:1126947

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1126947
Report Number(s):
SAND2014-0048C; 493228
Country of Publication:
United States
Language:
English

Similar Records

Precision Laser Annealing of Silicon devices for Enhanced Electro-Optic Performance.
Conference · Mon Jul 01 00:00:00 EDT 2013 · OSTI ID:1106085

Precision laser annealing of Si devices for enhanced electro-optic performance.
Conference · Tue Dec 31 23:00:00 EST 2013 · OSTI ID:1684789

An electro-optic voltage measurement device.
Conference · Wed Aug 01 00:00:00 EDT 2007 · OSTI ID:1267009

Related Subjects