Anamolous Drain Voltage Dependence in Bias Temparature Instability Measurements on High-k Field Effect Transistors.
Journal Article
·
· Journal of Applied Physics
OSTI ID:1123406
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- DE-AC04-94AL85000
- OSTI ID:
- 1123406
- Report Number(s):
- SAND2010-4541J; 492179
- Journal Information:
- Journal of Applied Physics, Related Information: Proposed for publication in Journal of Applied Physics.
- Country of Publication:
- United States
- Language:
- English
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