High-Indium-Content and Dislocation-Free InGaN Layers on GaN Nanowires.
Journal Article
·
· Applied Physics Letters
OSTI ID:1122539
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1122539
- Report Number(s):
- SAND2010-5498J; 491694
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters
- Country of Publication:
- United States
- Language:
- English
Similar Records
Spatially-Resolved Study of Luminescence and In Incorporation in GaN and High-In Content InGaN/GaN Nanowires.
Spatially-Resolved Study of Luminescence and In Incorporation in GaN and High-In Content InGaN/GaN Nanowires.
Transport Imaging for Contact-Free Measurements of Minority Carrier Diffusion in GaN GaN/AlGaN and GaN/InGaN Core-Shell Nanowires.
Conference
·
Sat May 01 00:00:00 EDT 2010
·
OSTI ID:1695508
Spatially-Resolved Study of Luminescence and In Incorporation in GaN and High-In Content InGaN/GaN Nanowires.
Conference
·
Wed Sep 01 00:00:00 EDT 2010
·
OSTI ID:1692332
Transport Imaging for Contact-Free Measurements of Minority Carrier Diffusion in GaN GaN/AlGaN and GaN/InGaN Core-Shell Nanowires.
Journal Article
·
Fri Apr 01 00:00:00 EDT 2011
· Applied Physics Letters
·
OSTI ID:1108376